High Mobility CMOS Technologies using III-V/Ge Channels
نویسندگان
چکیده
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs in the future under sub 10 nm regime, because of the enhanced carrier transport properties [1-4]. Here, there can be several CMOS structures using III-V/Ge channels, as schematically shown in Fig. 1. While one of the ultimate CMOS structures can be the combination of III-V nMOSFETs and Ge pMOSFETs, viable CMOS structures using III-V and/or Ge channels are still strongly dependent on coming progress in the device/process/ integration technologies of Ge/III-V nand pMOSFETs.
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